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TN4033A
TN4033A
C
TO-226
B E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at currents to 500 mA and collector voltages up to 70V. Sourced from Process 67.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
80 80 5.0 1.0 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
TN4033A 1.0 8.0 125 50
Units
W mW/C C/W C/W
1997 Fairchild Semiconductor Corporation
TN4033A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150C VEB = 5.0 V, IC = 0 80 80 5.0 50 50 10 V V V nA A A
ON CHARACTERISTICS
hFE DC Current Gain IC = 100 A, VCE = 5.0 V IC=100mA, VCE=5.0V,TA = -55C IC = 100 mA, VCE = 5.0 V IC = 500 mA, VCE = 5.0 V IC = 1.0 A, VCE = 5.0 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, VCE = 0.5 V 75 40 100 70 25 300
VCE(sat) VBE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage
0.15 0.5 0.9 1.1
V V V V
SMALL SIGNAL CHARACTERISTICS
Cobo Cibo hfe Output Capacitance Input Capacitance Small-Signal Current Gain VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1.0 20 110 4.0 pF pF
SWITCHING CHARACTERISTICS
ts ton tf Storage Time Turn-On Time Fall Time IC = 500 mA, IB1 = IB2 = 50 mA IC = 500 mA, IB1 = 50 mA IC = 500 mA, IB1 = IB2 = 50 mA 350 100 50 ns ns ns
*Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
TN4033A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
300
V CE = 5V
V CESAT - COLLE CTOR-EMITTER VOLTAGE (V)
TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
250 200 150 100 50 0 0.1
25 C 125 C
Collector-Emitter Saturation Voltage vs Collector Current
0.6 = 10
0.4
25 C
125 C
0.2
- 40 C
- 40 C
FE-
h
0.3
1 3 10 30 100 300 I C - COLLECTOR CURRENT (mA)
1000
10
100 I C - COLLECTOR CURRENT (mA)
1000
V BE(O N)- BASE-E MITTER ON VOLTAGE (V)
V BESAT - BASE-EMITTER VOLTAG E (V)
Base-Emitter Saturation Voltage vs Collector Current
1.2
= 10
Base-Emitter ON Voltage vs Collector Current
1
VCE = 5V
1
- 40 C
0.8
- 40 C
0.8
25 C 125 C
0.6
25 C
0.6
0.4
125 C
0.4 10 IC 100 - COLLECTOR CURRENT ( mA) 1000
0.2 0.1
1 10 I C - COLLECTOR CURRENT (mA)
50
Collector-Cutoff Current vs Ambient Temperature
I CBO - COLLECTOR CURRENT (nA) 100
V CB = 50V
Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage
500 f = 1.0 MHz CAPACITANCE (pF) 200 100 50 20 10
C ibo
10
1
0.1
C obo
25
50 75 100 125 T A - AMBIENT TE MPE RATURE ( C)
150
6 0.1
1 10 REVERSE BIAS VOLTAGE (V)
50
TN4033A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times vs Collector Current
240
V CE = -10V
Turn On and Turn Off Times vs Collector Current
500 t off 400 TIME (ns) 300 200 100 0 10 I B1 = I B2 = I C V CC = - 30V 10
200 TIME (ns) 160 120 80 40 0
V CE = -1.0V
t on 100 500 I C - COLLECTOR CURRENT (mA) 1000
1
2
20 100 I C - COLLECTOR CURRENT (mA)
200
Power Dissipation vs Ambient Temperature
1 PD - POWER DISSIPATION (W)
TO-226
0.75
0.5
0.25
0
0
25
50 75 100 TEMPERATURE ( o C)
125
150
TO-226AE Tape and Reel Data
TO -226AE Packaging Conf iguratio n: Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
FAIRCHIL D S EMICONDUCTOR CORPORATION L OT:
S e Fig 2 e .0 for va rious
HTB:B 10000
Reeli g Styles n
CBVK741B019
QTY:
NSID:
PN2222N
SP EC:
FSCINT
SP EC RE V: QA REV:
D/C1:
D9842
B2
Labe l 5 Reels per Int er med iate B ox
(FSCINT)
F63TNR Label s ampl e
LOT: CBVK7 41B019 QTY: 2000
Cus tom ized Labe l
F63TNR Labe l Cus tom ized
FSID: PN222N
SPEC:
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Labe l 375m m x 267m m x 375mm Int er med iate B ox
AMMO PACK OPTION
S e Fig 3 e .0 for 2 Ammo Pack Option s
TO-226AE TNR/AMMO PACKING INF R O MATION
Packing Reel
Style A E
Qua ntity 2,000 2,000 2,000 2,000
EOL code D26Z D27Z D74Z D75Z
Am m o
M P
FSCINT Labe l 327m m x 158m m x 135mm Im med iate B ox 5 A mm o box es per Int er med iate B ox
Uni t wei gh t Reel weig ht wi th c om po nents Amm o weig ht wi th c omp on en ts
= 0.300g m = 0.868 k g = 0.880 k g
Cus tom ized Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
Cus tom ized Labe l
F63TNR Bar c ode Label 333m m x 231m m x 183mm Int er med iate B ox
BULK OPTION
S e Bulk P e acking Informat ion tabl e
Anti -stati c FSCINT Bar c ode Label
(TO-226AE ) BULK PACKING INFORMATION
LEADCLIP DIMENSION NO L EAD CLIP NO L EAD CLIP NO L EADCLIP
Bub ble Sheets
EOL CO DE J18Z J05Z NO EOL CODE
DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD
QUANTITY 1.0 K / BOX 1.0 K / BOX 1.5 K / BOX
1,500 un its per EO70 box for s td o pti on
114m m x 102m m x 51mm EO70 Im mediate B ox
TO-226 STANDARD STRAIGHT
5 EO70 boxes pe r Int er med iate B ox
530m m x 130m m x 83mm Inter med iate box
Cus tomized Label
FSCINT Labe l 7,500 un its m axim um per interm edi at e box for st d opt ion
(c)2000 Fairchild Semiconductor International
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Reeling Style Configuration: Fi gure 2.0
Machine Option "A" (H) Machine Option "E"(J)
Style "A" D26Z, D70Z (s/h)
Style "E" D 27Z, D71Z (s/h)
TO-226AE Radial Ammo Packaging Configuration: Fi gure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92) FIRST WIRE OFF IS COL LECTOR (ON PKG. 92) ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE D74Z (M)
ORDER STYLE D75Z (P)
FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COL LECTOR ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Tape and Reel T aping Dimension Configuration: Fi gur e 4.0
Hd P Pd
b Hb W1 L H1 HO L1 S
d
WO W2 W
t
t1
P1
F1 DO
P2
ITEM DESCRI PTION Base of P ackage to Le ad Bend Componen Height t Lead Clinch He ight Component Base Heig ht Componen Alignm t ent (s ide / side ) Componen Alignm t ent ( front/bac ) k Componen Pitch t Feed H ole P itch Hole Center to First Lead Hole Center to C omponen C t enter Lead Spread Lead T hickness Cut Le ad Length Taped L ead Le ngt h Taped L ead T hicknes s
SYM BOL b Hb HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S
DIMENSION 0.098 (max) 1.078 ( +/- 0. 050) 0.630 ( +/- 0. 020) 0.748 ( +/- 0. 020) 0.040 (max ) 0.03 (max 1 ) 0.500 ( +/- 0. 020) 0.500 ( +/- 0. 008) 0.150 (+0.009, -0.010 ) 0.247 ( +/- 0. 007) 0.104 ( +/- 0 . 010) 0.018 (+0.002, -0.003) 0.429 (max ) 0.209 (+0.05 -0.052 1, ) 0.032 ( +/- 0. 006) 0.02 ( 1 +/- 0. 006) 0.708 (+0.02 -0.019) 0, 0.236 ( +/- 0. 012) 0.035 (max ) 0.360 ( +/- 0. 025) 0.157 (+0.008, -0.007) 0.004 (max )
PO
User Direction of Feed
TO-226AE Reel Configuration: Fi gur e 5.0
Carrier T ape Thickness Carrier Tape W idth Hold - down T ape W idth Hold - down T ape position Feed H ole P osition Sprocket Hole Diam eter Lead Spring O ut
E LE CT ROS TA TIC S EN SI TIV E D EV ICE S
Note : All d imensions ar in inches. e
D4
D1
ITEM D ESCRIPT IO N
SYMBO L
MINIMUM
MAXIMUM
F63TNR Label
D2
Reel Diamet er Arbor H ole Diam eter (Standard)
D1 D2 D2 D3 D4 W1 W2 W3
13 .975 1.160 0. 0 65 3. 0 10 2. 0 70 0.370 1.630
14 .025 1.200 0.700 3.300 3.100 0.570 1.690 2.09 0
Custom ized Label
(Small H ole) Core D iam eter Hub R ecess Inner Diam eter Hu Recess Dept h b Flange to F lange Inner W idth
W1
Hu b to Hu b Cente r W idth
W3
W2
Note: All dimensions are inches
D3
October 1999, Rev. A1
TO-226AE Package Dimensions
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.300
S4.70-4.32; S1.52-1.02;
2" TYP
S7.87-7.37;
S7.73-7.10;
S1.65-1.27;
2" TYP
0.51
S0.760.36;
S15.61-14.47;
S0.51-0.36;
S0.48-0.30;
S1.401.14;
S1.40-1.14;
PIN
99 E B C
95 E C B
S4.45-3.81; 1 5" TYP 2 3
1
2
3
TO-226AE (95,99)
S2.41-2.13;
For leadformed option ordering, refer to Tape & Reel data information.
October 1999, Rev. A1
(c)2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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First Production
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Rev. G

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